View MA4PBL027_946135.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
Rev. V1
Features
* * * * * * * * * * * Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver
Absolute Maximum Ratings1
@ TA = +25C ( Unless otherwise specified ) Parameter Forward Current Reverse Voltage Operating Temperature Storage Temperature Junction Temperature RF C.W. Incident Power RF & DC Dissipated Power Mounting Temperature Absolute Maximum 100 mA 90 V -55 C to +125 C -55 C to +150 C + 175 C 30 dBm C.W. 150 mW +235C for 10 seconds
Description
This device is a Silicon-Glass Beam-Lead PIN diode fabricated TM with M/A-COM's patented HMIC process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the air-bridges during handling and assembly. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed.
1. Exceeding these limits may cause permanent damage.
Case Style ODS-1302 Cathode A
Applications
The ultra low capacitance of this device allows use through Wband (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a simple + 5V TTL gate driver. These diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.
F
D
B
E side top
C
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
Electrical Specifications at +25C
Rev. V1
Symbol CT CT CT CT CT CT CT CT CT CT CT CT RS RS RS RS VF VR IR IR TL
Notes: 2. 3. 4.
Conditions 2 0V, 1MHz 2 -3V, 1MHz 2 -10V, 1MHz 2 -40V, 1MHz 2,4 0V, 100MHz 2,4 -3V, 100MHz 2,4 -10V, 100MHz 2,4 -40V, 100MHz 2,4 0V, 1GHz 2,4 -3V, 1GHz 2,4 -10V, 1GHz 2,4 -40V, 1GHz 10mA, 100 MHz 3,4 20mA, 100 MHz 3,4 10mA, 1GHz 3,4 20mA, 1GHz 3,4 20mA -10A -40 V -90 V +10mA / -6mA
Units pF pF pF pF pF pF pF pF pF pF pF pF V V nA uA ns
Typ 0.048 0.039 0.033 0.030 0.043 0.033 0.031 0.027 0.039 0.032 0.029 0.026 3.8 3.0 3.5 2.8 0.917 110 1.0 110
Max
0.040 0.040
1.1
10.0
Total capacitance, CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar. Series resistance RS is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) Rs and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with conductive silver epoxy.
Die Handling
All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized.
Die Bonding
These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermocompression bonding, parallel-gap welding, and electrically conductive silver epoxy. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for More Detailed Assembly Instructions.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
Rev. V1
Typical Performance Curves @ +25C Total Capacitance Ct vs V
6.0E-14 6.0E-14 5.0E-14 5.0E-14
Total Capacitance Ct vs Freq
4.0E-14 Ct (F)
4.0E-14
0V 5V
Ct (F)
3.0E-14
100MHz 1GHz
3.0E-14
40V
2.0E-14
2.0E-14
1.0E-14
1.0E-14
0.0E+00 0 5 10 15 20 Bias (V) 25 30 35 40
0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9 Freq (Hz)
Parallel Resistance Rp vs V
1E+07 14
Series Resistance Rs vs F
12 1mA
100MHz
1E+06
1E+05
10
1GHz
Rp (ohm) 1E+04 Rs (ohm) 8
1E+03
6 10mA
1E+02
4
1E+01
2 100mA
1E+00 0 5 10 15 20 Bias (V) 25 30 35 40
0 0.0E+0 1.0E+8 2.0E+8 3.0E+8 4.0E+8 5.0E+8 6.0E+8 7.0E+8 8.0E+8 9.0E+8 1.0E+9 Freq (Hz)
Series Resistance Rs vs I
10
Series Inductance Ls vs Freq
1.4E-10
100mA
1.2E-10
1.0E-10
10mA
100MHz Rs (ohm) Ls (H) 1GHz 1 1.00E-03 1.00E-02 Bias (A) 1.00E-01 8.0E-11
6.0E-11
4.0E-11
2.0E-11
0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9 Freq (Hz)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
Rev. V1
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4PBL027
HMICTM Silicon Beam-Lead PIN Diodes
Rev. V1
MA4PBL027 Microwave Model
C parasitic = 0.08 pF
Rs
Input Ls
Output
Cj
Notes : CT(V) = Cj (V) + Cparasitic ( Reverse Bias State ) Rs( I ) = Rj ( I ) + Rc ( Forward Bias State ) Rs ( V ) = Rj ( V ) = Rp ( V ) ( Reverse Bias State )
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

▲Up To Search▲

Price & Availability of MA4PBL027

	To Download MA4PBL027 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .